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© Brightever International Trading Ltd

Basic Information

Name: Carbon

Symbol: C

Atomic Number: 6

Atomic Mass: 12.0107 amu

Melting Point: 3500.0 °C (3773.15 °K, 6332.0 °F)

Boiling Point: 4827.0 °C (5100.15 °K, 8720.6 °F)

Number of Protons/Electrons: 6

Number of Neutrons: 6

Classification: Non-metal

Crystal Structure: Hexagonal

Density @ 293 K: 2.62 g/cm3

Color: May be black

Name

Sign

Purity

Shape 

Carbon

C

99.99%

Rod, Sheet, Plate, Crucible, Pellet, Sputtering Target

Pyrolytic Graphite (PG)

PG

99.998%

Rod, Sheet, Plate, Crucible, Pellet, Sputtering Target

Name

Sign

Purity

Shape 

 

Aluminum Titanium Carbon Alloy

 

 

AlTiC Alloy

 

5% Ti - 0.2% C

Waffles, Rods

 

Aluminum Titanium Carbon Alloy

 

 

AlTiC Alloy

 

3% Ti - 0.2% C

Waffles, Rods

 

Aluminum Titanium Carbon Alloy

 

 

AlTiC Alloy

 

 

3% Ti - 0.15% C

 

 

Waffles, Rods

 

Name

Sign

Purity

Shape 

Boron Carbide

B4C

99.5

Sputtering Target, Evaporation material,  Powders(40-300mesh)

Cerium Carbide

CeC2

 

 

 

Chromium Carbide

 

 

Cr3C2

 

 

99.5%

 

Sputtering Target, Evaporation material,  Powders(40-300mesh)

 

Chromium Carbonitride

 

 

CrCN

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(40-300mesh)

Hafnium Carbide

HfC

99.5%

Sputtering Target, Evaporation material,  powders(40-300mesh)

Lanthanum Carbide

LaC2

 

Sputtering Target, Evaporation material,  powders(200-300mesh)

Molybdenum Carbide

Mo2C

99.5

Sputtering Target, Evaporation material,  powders(40-300mesh)

 

Niobium Carbide

 

 

NbC

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(40-300mesh)

Samarium Carbide

SmC2

 

Sputtering Target, Evaporation material,  powders(200-300mesh)

Silicon Carbide

SiC

99.5

Sputtering Target, Evaporation material,  powders(200-300mesh)

 

Tantalum Carbide

 

 

TaC

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(200-300mesh)

 

Titanium Carbide

 

 

TiC

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(40-300mesh)

 

Titanium Carbonitride

 

 

TiCN

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(40-300mesh)

Tungsten Carbide

WC

99.5%

Sputtering Target, Evaporation material,  powders(200-300mesh)

Tungsten Carbide

W2C

99.5%

Sputtering Target, Evaporation material,  powders(200-300mesh)

Tungsten Carbide - Cobalt

WC - 6 wt. % Co

99.5%

Sputtering Target, Evaporation material,  powders(200-300mesh)

Tungsten Carbide - Cobalt

W2C - 12 wt. % Co

99.5%

Sputtering Target, Evaporation material,  powders(200-300mesh)

Vanadium Carbide

VC

99.5

Sputtering Target, Evaporation material,  powders(200-300mesh)

Yttrium Carbide

YC2

99.5%

Sputtering Target, Evaporation material,  powders(200-300mesh)

 

Zirconium Carbide

 

 

ZrC

 

 

99.5%

 

Sputtering Target, Evaporation material,  powders(100-300mesh)

Carbon(C)

Element

Alloys

Compounds